As all science students know, there are only three basic elements
that make up an electrical circuit:the resistor, the capacitor and the
inductor.
Sorry guys!It may be time to tear up your textbooks and
write the new ones:scientists have realised physical samples of a
fourth fundamental element which they call a memristor - short for
memory resistor.
In a paper published in the latest issue of
NATURE MAGAZINE(”The missing memristor found”,may 1st ,2008;vol no.453 ;
pp 80-83), researchs at hewlett packard labs, report that the missing
fourth element of the circuitry that professor Leon Chua of the
University of California in Berkeley predicted in 1971 is indeed
realisable.
PRACTICAL UNITS :
The team, led by R.Stanley
Williams, believes that using nano technology one can soon build
practical units of the resistor-with-memory that cannot be created by a
mere combination of the three basic circuit elements.
Such
element could fuel a new class of computer memory that would ‘remember’,
even if the machine were switched off……in other words, tomorrow’s PCs
could boot up and spring to life instantly.
The engineers are busy building memristors using Titanium Dioxide and have already realised a few hybrid versions in silicon.
Memory
banks built using memristors could be a thousand times faster than
todays magnetic disk systems , and consume a fraction of the power, the
scientists suggest.
In electrical circuit theory, the
memristor
is a passice circuit element. It has been described as the fourth basic
type of passive circuit element, alongside the well-known capacitor,
resistor, and inductor. The name is a portmanteau of
memory resistor.
Although the memristor was predicted and described in 1971 by Leon Chua of UC Berkeley, in a paper in
IEEE Transactions on Circuit Theory,
it was a hypothetical device for 37 years, with no known physical examples. According
to Chua, the “era of nanoscale electronics will be enabled by the
memristor. This is not just an invention, it is a basic scientific
discovery.
In April 2008, a working device with similar
characteristics to a memristor was announced by a team of researchers at
HP Labs. The new circuit element may enable the development of a new
class of high-density non-volatile digital memory. Performance of
memristors improves as they are scaled down, and they generate less heat
than transistors. The memristor also has unique analog properties that
may lead to the invention of other devices.
The memristor is an element in which the magnetic flux
Φm is a function of the accumulated electric charge
q in the device. The rate of change of flux with charge

is known as
memristance. This is comparable to the other three fundamental circuit elements:
- Resistance:

- Inductance:

- Capacitance:

Here
q is electrical charge,
I is electrical current,
V is electrical potential and
Φm
is magnetic flux. The differential forms of these equations are used
because we are comparing non-linear circuit elements; a linear memristor
would be uninteresting, as explained below.
Applying Faraday’s
law of electromagnetic induction and the chain rule to the equation
defining the memristance, one obtains that the voltage
V across a memristor is related to the current
I by the instantaneous value of the memristance:

Thus at any given instant, a memristor behaves like an ordinary resistor. However, its “resistance”
M(q)
is a value which depends on the charge accumulated in the device. This
differs from ordinary resistors where the resistance is determined by
fixed physical properties and transistors where the resistance is
controlled by either the voltage at or current through a gate electrode.
A linear memristor (one for which
M is constant) would thus be indistinguishable from an ordinary linear resistor (one for which
R is constant), with
M = R.
Memristance can be said to depend on the history of the charge that has
flowed through the device in the same way that the voltage of
capacitors does.
The memristor is capable of “remembering” how
much electrical charge most recently passed through it in one direction
versus another. Thus, it can “remember” the state it was last in.
Fabrication :
Interest in the memristor revived in 2007 when an experimental solid-state version was reported
by
Stanley Williams of hewlett packard. A solid-state device could not be
constructed until the unusual behavior of nanoscale materials made it
possible. The device does not use magnetic flux as the theoretical
memristor suggested, nor stores charge as a capacitor does, but instead
achieves a resistance dependent on the history of current using a
chemical mechanism.
The HP device is composed of a thin (5 nm)
titanium dioxide film between two electrodes. Initially, there are two
layers to the film, one of which has a slight depletion of oxygen atoms.
The oxygen vacancies act as charge carriers, meaning that the depleted
layer has a much lower resistance than the non-depleted layer. When an
electric field is applied, the oxygen vacancies drift, changing the
boundary between the high-resistance and low-resistance layers. Thus the
resistance of the film as a whole is dependent on how much charge has
been passed through it in a particular direction, which is reversible by
changing the direction of current.
Samsung has a pending U.S. patent application for a memristor similar to that described by Williams.
Potential applications :
Williams’s
solid-state memristors can be combined into devices called crossbar
latches, which would replace transistors in future computers, taking up a
much smaller area. They can also be fashioned into non-volatile
solid-state memory, which would allow greater data density than hard
drives with access times potentially similar to DRAM, replacing both
components. HP prototyped a crossbar latch memory using the devices that
can fit 100 gigabits in a square centimeter. For comparison, the
highest-density flash memories at this time (2008) hold 16 gigabits. HP
has reported that its version of the memristor is about one tenth the
speed of DRAM.
The devices’ resistance would be read with alternating current so that they do not affect the stored value.